hole mobility

简明释义

空穴漂移率

英英释义

例句

1.To optimize the performance of OLEDs, engineers must consider the hole mobility 孔迁移率 of the organic layers.

为了优化OLED的性能，工程师必须考虑有机层的孔迁移率 hole mobility。

2.Higher hole mobility 孔迁移率 can lead to faster electronic devices.

更高的孔迁移率 hole mobility可以带来更快的电子设备。

3.Researchers are focusing on improving the hole mobility 孔迁移率 in perovskite materials to enhance device performance.

研究人员正在专注于提高钙钛矿材料中的孔迁移率 hole mobility以增强器件性能。

4.The efficiency of organic solar cells is largely determined by the hole mobility 孔迁移率 of the materials used.

有机太阳能电池的效率在很大程度上取决于所用材料的孔迁移率 hole mobility。

5.The study found a correlation between temperature and hole mobility 孔迁移率 in semiconductor materials.

研究发现温度与半导体材料中的孔迁移率 hole mobility之间存在相关性。

作文

In the field of semiconductor physics, understanding charge carriers is crucial for the development of efficient electronic devices. Two primary types of charge carriers are electrons and holes. While electrons are negatively charged, holes can be thought of as positive charge carriers that represent the absence of an electron in a semiconductor's crystal lattice. One important property that characterizes how quickly these holes can move through a material is known as hole mobility, or in Chinese, 孔迁移率. Hole mobility is defined as the ability of holes to move through a semiconductor when an electric field is applied. It is a critical parameter in determining the performance of semiconductor devices such as transistors, diodes, and solar cells. The higher the hole mobility, the more efficiently the device can operate because it allows for faster charge transport. This is particularly important in high-speed applications where rapid switching is necessary. The factors that influence hole mobility include temperature, the material's crystal structure, and impurities present in the semiconductor. For instance, at higher temperatures, phonon scattering increases, which can reduce hole mobility. Similarly, the presence of defects or impurities can create localized states in the band structure, hindering the movement of holes and thus decreasing their mobility. Different semiconductor materials exhibit varying levels of hole mobility. Silicon, for example, has a moderate hole mobility, while materials like gallium arsenide show significantly higher values. This difference is one reason why certain materials are preferred for specific applications. For high-frequency electronics, materials with high hole mobility are often chosen to enhance performance. Moreover, the concept of hole mobility is not just limited to traditional silicon-based semiconductors. In recent years, organic semiconductors have gained attention due to their flexibility and potential applications in flexible electronics. However, organic materials typically exhibit lower hole mobility compared to their inorganic counterparts. Researchers are continuously exploring ways to enhance the hole mobility of organic semiconductors to make them more viable for commercial applications. In conclusion, hole mobility is a fundamental property in semiconductor physics that significantly impacts the performance of electronic devices. Understanding and optimizing hole mobility can lead to advancements in technology, enabling the development of faster, more efficient electronic components. As research continues to evolve, particularly in the realm of new materials, the importance of hole mobility will remain a key focus for scientists and engineers alike.

在半导体物理领域，理解电荷载流子对高效电子设备的发展至关重要。电荷载流子主要有两种类型：电子和空穴。电子带负电荷，而空穴可以被视为正电荷载流子，代表半导体晶格中电子的缺失。一个重要的特性是描述这些空穴在材料中移动速度的能力，这被称为孔迁移率，中文为孔迁移率。孔迁移率被定义为当施加电场时，空穴在半导体中移动的能力。这是决定半导体器件性能的关键参数，如晶体管、二极管和太阳能电池。孔迁移率越高，器件的工作效率越高，因为它允许更快的电荷运输。这在需要快速开关的高频应用中特别重要。影响孔迁移率的因素包括温度、材料的晶体结构和半导体中存在的杂质。例如，在较高温度下，声子散射增加，这可能会降低孔迁移率。同样，缺陷或杂质的存在可以在能带结构中产生局部态，阻碍空穴的运动，从而降低它们的迁移率。不同的半导体材料表现出不同水平的孔迁移率。例如，硅的孔迁移率适中，而砷化镓则显示出显著更高的值。这种差异是某些材料在特定应用中受到青睐的原因之一。对于高频电子设备，通常选择具有高孔迁移率的材料以提高性能。此外，孔迁移率的概念不仅限于传统的硅基半导体。近年来，由于其灵活性和在柔性电子产品中的潜在应用，有机半导体引起了关注。然而，有机材料通常表现出比无机材料低的孔迁移率。研究人员不断探索增强有机半导体孔迁移率的方法，以使其在商业应用中更具可行性。总之，孔迁移率是半导体物理中的一个基本属性，对电子设备的性能有重大影响。理解和优化孔迁移率可以促进技术进步，使更快、更高效的电子元件得以发展。随着研究的不断发展，特别是在新材料领域，孔迁移率的重要性将继续成为科学家和工程师们关注的重点。