donor impurity

简明释义

施主杂质

英英释义

例句

1.Researchers are studying how donor impurity levels influence carrier mobility in materials.

研究人员正在研究供体杂质水平如何影响材料中的载流子迁移率。

2.In doping processes, the type and amount of donor impurity are carefully selected.

在掺杂过程中，供体杂质的类型和数量被仔细选择。

3.The fabrication process must minimize donor impurity to achieve high-quality crystals.

制造过程必须尽量减少供体杂质以获得高质量晶体。

4.The presence of donor impurity in the semiconductor can significantly affect its electrical properties.

半导体中存在的供体杂质会显著影响其电气特性。

5.Controlling donor impurity concentration is crucial for optimizing device performance.

控制供体杂质浓度对于优化器件性能至关重要。

作文

In the field of semiconductor physics, the concept of donor impurity plays a crucial role in determining the electrical properties of materials. Semiconductors, such as silicon, are not inherently conductive; their conductivity can be significantly enhanced by introducing certain impurities into their crystalline structure. This process is known as doping, and the added impurities can either donate electrons or accept them, thus altering the material's behavior. A donor impurity refers specifically to an atom that donates free electrons to the conduction band of the semiconductor, effectively increasing its conductivity.For instance, when phosphorus atoms are introduced into silicon, they act as donor impurities. Phosphorus has five valence electrons, while silicon has four. When a phosphorus atom replaces a silicon atom in the lattice, four of its electrons bond with the surrounding silicon atoms, while the fifth electron becomes free to move within the lattice. This extra electron enhances the material’s ability to conduct electricity, making it n-type (negative-type) semiconductor.The significance of donor impurities extends beyond mere conductivity. They also influence other electronic properties, such as carrier concentration and mobility. The concentration of donor impurities determines how many free electrons are available for conduction. In applications like transistors, diodes, and solar cells, controlling the level of donor impurities is essential to achieve the desired performance characteristics. Engineers must carefully calculate the amount of dopant to ensure optimal functionality.Moreover, understanding donor impurities is vital for the development of advanced materials and devices. As technology progresses, the demand for smaller, faster, and more efficient electronic components increases. Researchers are constantly exploring new doping techniques and materials to enhance the performance of semiconductors. For example, the introduction of novel donor impurities can lead to improved efficiency in solar cells, allowing for better energy conversion rates. Similarly, in the realm of quantum computing, precise control over donor impurities can facilitate the creation of qubits, which are the building blocks of quantum information processing.The study of donor impurities also intersects with environmental considerations. As the world moves towards sustainable technologies, the need for eco-friendly materials in electronics is becoming increasingly important. Researchers are investigating the use of less toxic elements as donor impurities, which could minimize the ecological impact of semiconductor manufacturing. This shift not only addresses environmental concerns but also opens up new avenues for innovation in material science.In conclusion, the concept of donor impurity is fundamental to the understanding and advancement of semiconductor technology. By donating free electrons to the conduction band, these impurities enhance the electrical properties of materials, enabling a wide range of applications in modern electronics. As we continue to innovate and push the boundaries of technology, the role of donor impurities will remain pivotal in shaping the future of electronic devices and systems.

在半导体物理领域，donor impurity（施主杂质）的概念在决定材料的电气特性方面起着至关重要的作用。半导体，如硅，本身并不具备导电性；通过将某些杂质引入其晶体结构，可以显著增强其导电性。这一过程称为掺杂，添加的杂质可以捐赠电子或接受电子，从而改变材料的行为。donor impurity特指一种原子，它将自由电子捐赠给半导体的导带，有效地提高了其导电性。例如，当磷原子被引入硅中时，它们作为donor impurities（施主杂质）起作用。磷有五个价电子，而硅有四个。当一个磷原子替代硅晶格中的一个硅原子时，它的四个电子与周围的硅原子形成共价键，而第五个电子则变得自由，可以在晶格中移动。这个额外的电子增强了材料的导电能力，使其成为n型（负型）半导体。donor impurities的重要性不仅限于导电性。它们还影响其他电子特性，如载流子浓度和迁移率。donor impurities的浓度决定了可用于导电的自由电子数量。在晶体管、二极管和太阳能电池等应用中，控制donor impurities的水平对于实现所需的性能特征至关重要。工程师必须仔细计算掺杂剂的数量，以确保最佳功能。此外，理解donor impurities对先进材料和设备的发展至关重要。随着技术的进步，对更小、更快和更高效的电子元件的需求不断增加。研究人员不断探索新的掺杂技术和材料，以提高半导体的性能。例如，引入新型的donor impurities可以提高太阳能电池的效率，从而改善能源转换率。同样，在量子计算领域，精确控制donor impurities可以促进量子比特的创建，而量子比特是量子信息处理的基本单元。donor impurities的研究还与环境考虑交叉。随着世界朝着可持续技术发展，电子产品中环保材料的需求日益重要。研究人员正在调查使用较少有毒元素作为donor impurities，这可能会减少半导体制造对生态的影响。这一转变不仅解决了环境问题，还为材料科学的创新开辟了新的途径。总之，donor impurity的概念是理解和推进半导体技术的基础。通过将自由电子捐赠给导带，这些杂质增强了材料的电气特性，使现代电子产品的广泛应用成为可能。随着我们不断创新，推动技术的边界，donor impurities在塑造未来电子设备和系统方面仍将发挥关键作用。