silicided source

简明释义

硅化物源极

英英释义

A silicided source refers to a semiconductor device where the source region has been treated or modified with a silicide material to reduce resistance and improve electrical performance.

硅化源是指一种半导体器件,其中源区域经过处理或用硅化物材料改性,以降低电阻并改善电气性能。

例句

1.The research focused on the advantages of a silicided source in semiconductor applications.

研究集中在硅化源在半导体应用中的优点。

2.A silicided source allows for better thermal management in high-power devices.

在高功率设备中,硅化源允许更好的热管理。

3.The team tested various materials to create an optimal silicided source for their project.

团队测试了多种材料,以创建一个最佳的硅化源用于他们的项目。

4.The engineer explained how the silicided source can improve device performance.

工程师解释了如何通过硅化源来提高设备性能。

5.Using a silicided source reduces the resistance in the circuit significantly.

使用硅化源可以显著降低电路中的电阻。

作文

In the realm of semiconductor technology, the term silicided source refers to a specific type of electrical contact that is formed by the process of silicidation. This process involves the reaction of silicon with a metal, typically cobalt or nickel, to create a silicide layer that enhances electrical conductivity and reduces resistance. The silicided source plays a critical role in the performance of various electronic devices, particularly in MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). As the demand for faster and more efficient electronic components continues to grow, understanding the properties and advantages of silicided sources becomes increasingly important.The primary advantage of using a silicided source lies in its ability to minimize contact resistance. Traditional metal contacts can suffer from high resistance due to poor interface quality and oxidation. In contrast, the silicide formed during the silicidation process provides a much lower resistance path for current flow. This is crucial for high-speed applications where even the slightest delay can impact overall performance. For instance, in modern integrated circuits, the reduction of contact resistance through silicided sources allows for quicker switching times and improved signal integrity.Moreover, silicided sources also contribute to the thermal stability of devices. The formation of a silicide layer helps to mitigate the effects of thermal stress, which can lead to device failure over time. By providing a robust and stable contact point, silicided sources enhance the longevity and reliability of semiconductor devices, which is a vital consideration in the design of modern electronics.The fabrication of silicided sources involves several steps, including deposition, annealing, and etching. Initially, a thin layer of metal is deposited onto the silicon substrate. This is followed by a high-temperature annealing process that allows the metal to react with the silicon, forming the desired silicide layer. Finally, any excess metal is etched away, leaving behind a clean and conductive contact. This intricate process requires precise control over temperature and timing to ensure optimal results and avoid issues such as incomplete silicidation or unwanted phase formations.In conclusion, the concept of silicided source is fundamental to the advancement of semiconductor technology. Its ability to reduce contact resistance, improve thermal stability, and enhance device reliability makes it an essential component in modern electronic design. As technology continues to evolve, the significance of silicided sources will likely increase, paving the way for even more innovative and efficient electronic devices in the future.

在半导体技术领域,短语silicided source指的是通过硅化过程形成的一种特定类型的电接触。该过程涉及硅与金属(通常是钴或镍)之间的反应,以创建一个硅化层,从而增强电导率并降低电阻。silicided source在各种电子设备的性能中发挥着关键作用,特别是在MOSFET(金属氧化物半导体场效应晶体管)中。随着对更快和更高效的电子元件需求的不断增长,理解silicided sources的特性和优势变得越来越重要。使用silicided source的主要优点在于其能够最小化接触电阻。传统的金属接触由于界面质量差和氧化而可能遭受高电阻。相比之下,在硅化过程中形成的硅化物为电流流动提供了更低电阻的路径。这对于高速应用至关重要,因为即使是微小的延迟也会影响整体性能。例如,在现代集成电路中,通过silicided sources减少接触电阻可以实现更快的开关时间和更好的信号完整性。此外,silicided sources还促进了器件的热稳定性。形成的硅化层有助于减轻热应力的影响,这可能导致设备随时间的推移而失效。通过提供一个稳健且稳定的接触点,silicided sources增强了半导体设备的耐用性和可靠性,这是现代电子设计中的重要考虑因素。silicided sources的制造涉及多个步骤,包括沉积、退火和刻蚀。最初,在硅基板上沉积一层薄金属。随后进行高温退火过程,使金属与硅反应,形成所需的硅化层。最后,去除多余的金属,留下干净且导电的接触。这一复杂的过程需要对温度和时间进行精确控制,以确保最佳结果,并避免出现不完全硅化或不必要的相形成等问题。总之,silicided source的概念对半导体技术的发展至关重要。其减少接触电阻、提高热稳定性和增强设备可靠性的能力,使其成为现代电子设计中不可或缺的组成部分。随着技术的不断发展,silicided sources的重要性可能会进一步增加,为未来更具创新性和高效的电子设备铺平道路。