recombination lifetime

简明释义

复合寿命

英英释义

例句

1.Understanding the factors that affect the recombination lifetime 重组寿命 can lead to advancements in LED technology.

了解影响recombination lifetime 重组寿命的因素可以推动LED技术的发展。

2.The efficiency of solar cells can be significantly improved by reducing the recombination lifetime 重组寿命 of charge carriers.

通过减少电荷载流子的recombination lifetime 重组寿命，可以显著提高太阳能电池的效率。

3.A longer recombination lifetime 重组寿命 typically indicates better material quality in semiconductors.

较长的recombination lifetime 重组寿命通常表明半导体材料的质量更好。

4.Researchers are studying the recombination lifetime 重组寿命 of excitons in organic materials to enhance light emission.

研究人员正在研究有机材料中激子（exciton）的recombination lifetime 重组寿命，以增强光发射。

5.The team measured the recombination lifetime 重组寿命 to evaluate the performance of different photovoltaic devices.

团队测量了recombination lifetime 重组寿命以评估不同光伏设备的性能。

作文

In the field of semiconductor physics, the concept of recombination lifetime plays a crucial role in determining the efficiency of electronic devices. The recombination lifetime refers to the average time that charge carriers, such as electrons and holes, can exist before they recombine. This process is vital because it directly influences the performance of materials used in solar cells, light-emitting diodes (LEDs), and transistors.To understand the significance of recombination lifetime, we must first explore what happens when charge carriers are generated. In semiconductors, when energy is supplied—such as from light or heat—electrons can be excited from the valence band to the conduction band, leaving behind holes in the valence band. This generation of electron-hole pairs is essential for the operation of many devices. However, these pairs do not last indefinitely. They will eventually recombine, which means that an electron will fall back into a hole, releasing energy in the form of light or heat.The recombination lifetime is influenced by various factors, including temperature, material quality, and the presence of impurities. For instance, in high-quality semiconductors, the recombination lifetime can be relatively long, allowing charge carriers to travel significant distances before recombining. This property is particularly desirable in solar cells, where longer lifetimes can lead to higher efficiencies in converting sunlight into electricity.On the other hand, in materials with many defects or impurities, the recombination lifetime is often shorter. These defects provide additional pathways for recombination, effectively reducing the time that charge carriers can contribute to electrical current. This phenomenon is detrimental to device performance, as it leads to lower output and efficiency.Moreover, the recombination lifetime can also be affected by external conditions. For example, increasing the temperature typically increases the energy of the charge carriers, which can lead to a higher rate of recombination. This relationship highlights the importance of thermal management in the design of electronic devices, particularly those operating in high-temperature environments.In practical applications, understanding and optimizing the recombination lifetime is a key aspect of material research and device engineering. Researchers strive to develop new materials and techniques that can extend the recombination lifetime to enhance the performance of devices. For example, surface passivation techniques can reduce the number of surface states that contribute to recombination, thereby increasing the lifetime of charge carriers.In conclusion, the recombination lifetime is a fundamental parameter in semiconductor physics that significantly influences the performance of electronic devices. By improving our understanding of this concept and finding ways to manipulate it, we can pave the way for more efficient technologies that harness the power of charge carriers effectively. As we continue to innovate and push the boundaries of technology, the importance of the recombination lifetime will only grow, shaping the future of electronics and energy conversion systems.

在半导体物理领域，重组寿命的概念在决定电子设备效率方面起着至关重要的作用。重组寿命是指电荷载流子（如电子和空穴）在重新结合之前能够存在的平均时间。这个过程至关重要，因为它直接影响太阳能电池、发光二极管（LED）和晶体管等材料的性能。为了理解重组寿命的重要性，我们必须首先探讨电荷载流子生成时发生的情况。在半导体中，当能量被提供——例如来自光或热——电子可以从价带激发到导带，留下价带中的空穴。这种电子-空穴对的生成对于许多设备的操作是必不可少的。然而，这些对并不会无限期存在。它们最终会重新结合，这意味着一个电子将回落到一个空穴中，释放出光或热的能量。重组寿命受到多种因素的影响，包括温度、材料质量和杂质的存在。例如，在高质量的半导体中，重组寿命可能相对较长，允许电荷载流子在重新结合之前移动相当大的距离。这种特性在太阳能电池中尤为可取，因为更长的寿命可以导致更高的将阳光转化为电能的效率。另一方面，在缺陷或杂质较多的材料中，重组寿命通常较短。这些缺陷提供了额外的重组路径，有效降低了电荷载流子可以为电流贡献的时间。这种现象对设备性能是有害的，因为它导致输出和效率降低。此外，重组寿命还会受到外部条件的影响。例如，增加温度通常会增加电荷载流子的能量，这可能导致更高的重组速率。这种关系突显了热管理在电子设备设计中的重要性，尤其是那些在高温环境下运行的设备。在实际应用中，理解和优化重组寿命是材料研究和设备工程的关键方面。研究人员努力开发新的材料和技术，以延长重组寿命，以增强设备的性能。例如，表面钝化技术可以减少导致重组的表面态数量，从而增加电荷载流子的寿命。总之，重组寿命是半导体物理中的一个基本参数，对电子设备的性能有显著影响。通过提高我们对这一概念的理解并寻找操控它的方法，我们可以为更高效的技术铺平道路，有效利用电荷载流子的力量。随着我们不断创新并推动技术的边界，重组寿命的重要性只会增加，塑造电子和能量转换系统的未来。