extrinsic semiconductor

简明释义

含杂质半导体

英英释义

例句

1.The electrical properties of an extrinsic semiconductor 外部半导体 depend on the type and concentration of the dopant.

<来外部半导体>的电气性质取决于掺杂剂的类型和浓度。

2.Silicon is commonly used as an extrinsic semiconductor 外部半导体 after it is doped with phosphorus or boron.

硅常被用作<来外部半导体>，在掺入磷或硼后使用。

3.The performance of an extrinsic semiconductor 外部半导体 can be significantly improved by doping.

通过掺杂，可以显著提高<来外部半导体>的性能。

4.In many electronic devices, we rely on extrinsic semiconductors 外部半导体 to achieve desired conductivity.

在许多电子设备中，我们依赖<来外部半导体>来实现所需的导电性。

5.Understanding the behavior of extrinsic semiconductors 外部半导体 is crucial for designing efficient solar cells.

理解<来外部半导体>的行为对于设计高效的太阳能电池至关重要。

作文

In the realm of modern electronics, the term extrinsic semiconductor refers to a type of semiconductor material that has been intentionally doped with impurities to enhance its electrical properties. Unlike intrinsic semiconductors, which are pure forms of semiconductor materials like silicon or germanium, extrinsic semiconductors have added elements that significantly alter their conductivity. This doping process is crucial for the functionality of various electronic devices, including diodes, transistors, and integrated circuits.The primary purpose of doping is to increase the number of charge carriers in the semiconductor. In the case of extrinsic semiconductors, there are two main types: n-type and p-type. N-type semiconductors are created by adding elements that have more valence electrons than the semiconductor itself, such as phosphorus or arsenic to silicon. These additional electrons become free charge carriers, allowing for increased conductivity. Conversely, p-type semiconductors are formed by introducing elements with fewer valence electrons, such as boron or gallium, which create 'holes' or positive charge carriers in the material.The significance of extrinsic semiconductors cannot be overstated, as they form the backbone of modern electronic technology. For instance, in a typical silicon-based transistor, the interaction between n-type and p-type regions creates a junction that can control the flow of electricity. This principle is fundamental to the operation of various devices, including amplifiers, switches, and digital logic gates.Moreover, the ability to manipulate the electrical properties of semiconductors through doping has led to the development of more efficient and compact electronic components. The miniaturization of technology, often referred to as Moore's Law, is largely attributed to advancements in semiconductor manufacturing, particularly the use of extrinsic semiconductors. As engineers and scientists continue to explore new materials and doping techniques, the potential for even more powerful and efficient electronic devices expands.However, the production of extrinsic semiconductors is not without challenges. The precise control of doping levels is critical, as too much or too little can lead to poor performance or even failure of the semiconductor device. Additionally, the environmental impact of semiconductor manufacturing processes has become a growing concern, prompting researchers to seek more sustainable practices and materials.In conclusion, extrinsic semiconductors play an essential role in the field of electronics, enabling the creation of a wide range of devices that we rely on daily. By understanding the principles behind doping and the differences between intrinsic and extrinsic types, one can appreciate the complexity and ingenuity involved in modern semiconductor technology. As we look to the future, the continued innovation in this area will undoubtedly shape the next generation of electronic devices and systems, making our lives more connected and efficient than ever before.

在现代电子学领域，术语外延半导体指的是一种经过故意掺杂杂质以增强其电气特性的半导体材料。与纯净的半导体材料（如硅或锗）不同，外延半导体具有显著改变其导电性的添加元素。掺杂过程对于各种电子设备的功能至关重要，包括二极管、晶体管和集成电路。掺杂的主要目的是增加半导体中的电荷载流子数量。在外延半导体的情况下，有两种主要类型：n型和p型。n型半导体是通过添加比半导体本身具有更多价电子的元素（如磷或砷）来创建的。这些额外的电子成为自由电荷载流子，从而提高导电性。相反，p型半导体是通过引入具有较少价电子的元素（如硼或镓）来形成的，这会在材料中产生“孔”或正电荷载流子。外延半导体的重要性不容小觑，因为它们构成了现代电子技术的基础。例如，在典型的基于硅的晶体管中，n型和p型区域之间的相互作用形成了一个结，可以控制电流的流动。这个原理是各种设备操作的基础，包括放大器、开关和数字逻辑门。此外，通过掺杂操控半导体的电气特性的能力，推动了更高效、更紧凑的电子元件的发展。技术的微型化，通常被称为摩尔定律，很大程度上归因于半导体制造的进步，特别是对外延半导体的使用。随着工程师和科学家继续探索新材料和掺杂技术，开发出更强大和高效的电子设备的潜力不断扩大。然而，外延半导体的生产并非没有挑战。掺杂水平的精确控制至关重要，因为过多或过少都可能导致半导体设备的性能不佳甚至失效。此外，半导体制造过程对环境的影响日益受到关注，这促使研究人员寻求更可持续的实践和材料。总之，外延半导体在电子领域中发挥着至关重要的作用，使我们依赖的各种设备得以创造。通过理解掺杂的原理以及内在和外在类型之间的差异，人们可以欣赏到现代半导体技术中的复杂性和独创性。展望未来，该领域的持续创新无疑将塑造下一代电子设备和系统，使我们的生活比以往任何时候都更加连接和高效。